SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device is provided for excellent source/drain interior pressure, low substrate effect, and the electricity of low consumption. CONSTITUTION: An SOI layer (5) is formed on a silicon substrate (1) with a buried insulating layer (3) in between. In the SOI layer (5), SOI-MOSFET having a drain area (5a) and a source area (5b) which are so formed as to define a channel forming area (5c) and a gate electrode layer (9) facing to the channel forming area (5c) with an insulating layer (7) in between is formed. There is provided an FS isolation structure in which an FS plate (11) which faces to the area of the SOI layer (5) near the ends of the drain and source areas (5a and 5b) through the insulating layer (7) is provided and the SOI-MOSFET is electrically isolated from other elements by fixing the potential at the area of the SOI layer (5) facing the plate (11) by imparting a predetermined potential to the FS plate.