CU(HFAC)TMVS (COPPER HEXA FLUORO ACETYLACETONATE TRIMETYL VINYL SILANE) PRECURSOR IMPROVING ELECTRIC RATE OF THE COPPER BY ADDING WATER

摘要

PURPOSE: A Cu(hfac)TMVS (Copper hexa fluoro acetylacetonate Tri Metyl Vinyl Silane) precursor is provided to improve an accumulating speed of Cu without decreasing a resistant rate of the Cu, which is accumulated on the surface of an integrated circuit by mixing a little vapor and volatile Cu(hfac)TMVS. CONSTITUTION: A Cu precursor mixture comprises a volatile Cu(hfac)TMVS having volatile vapor pressure and vapor having vapor pressure. The vapor increases an electricity conductive rate and the volatile Cu(hfac)TMVS. so that the vapor pressure of the vapor can be an extent from 0.5 to 5 percent of Cu(hfac)TMVS precursor vapor pressure.