| 摘要 |
PURPOSE: An LCD and manufacturing method thereof is provided to improve a driving ability and the characteristic of an electric field mobility in a pixel region by forming a poly silicon thin film transistor of staggered type in a peripheral region and forming an amorphous silicon thin film transistor in the pixel region. CONSTITUTION: A metal film for a gate electrode is deposited on a glass substrate(1) and then a certain portion of the glass substrate(1) is patterned. A patterned metal film(2a) in the pixel region is a gate electrode of a thin film transistor formed in the pixel region. Patterned metal films(2b,2c) in a peripheral region become a source electrode of and a drain electrode of a thin film transistor formed in the peripheral region. A silicon oxidation film(SiO2), a silicon nitration film(SiN), or a silicon nitrification film(SiON) are selectively deposited on the glass substrate(1). The deposited silicon oxidation film(SiO2), the deposited silicon nitration film(SiN), or the deposited silicon nitrification film(SiON) are patterned using a photo lithography process for being only remained in the pixel region and then a gate insulating film(3) of the thin film transistor is formed in the pixel region. An amorphous silicon layer for a channel is deposited on the surface of the glass substrate(1) and then a channel layer(4) is formed.
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