发明名称 RAW MATERIAL SOLUTION FOR FORMING FILM OF FERROELECTRIC THIN FILM AND FORMATION OF FILM
摘要 PROBLEM TO BE SOLVED: To obtain a raw material solution for forming a film capable of forming a ferroelectric thin film in a homogeneous surface form by including a specific amount of acetone in a solution containing alkoxides of two or more kinds of metals selected from Pb, La, Zr and Ti, their partial hydrolyzates and/or organic acid salts in an organic solvent. SOLUTION: The content of acetone to be added is 60-5 wt.% based on the weight expressed in terms of oxides of the contained metals. The resultant ferroelectric thin film has a composition represented by the general formula Pb1-xLax(ZryTi1-y)1-x/4O3 [0<=(x)<1; 0<=(y)<=1]. The raw material solution is applied to a heat-resistant substrate and heated in air or a steam-containing atmosphere to form a metal oxide film. The application and heating, as necessary, are repeated until the film attains a desired thickness and the resultant film is baked at the crystallizing temperature or above during the heating or after repeating the application and heating to thereby form the ferroelectric thin film. For example, lead acetate or diisopropoxylead is used as a Pb compound as an organometallic compound.
申请公布号 JP2000119021(A) 申请公布日期 2000.04.25
申请号 JP19980292396 申请日期 1998.10.14
申请人 MITSUBISHI MATERIALS CORP 发明人 SOYAMA NOBUYUKI;MAKI KAZUMASA;MORI AKIRA;KAGEYAMA KENSUKE;MATSUURA MASAYA;OGI KATSUMI
分类号 C04B35/49;C01G25/00;H01B3/12 主分类号 C04B35/49
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