| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an aluminum alloy material excellent in corrosion resistance for gas/plasma suitable for a material of a production apparatus of a semiconductor, liquid crystal, etc., in which a gas containing a corrosive component/element or a plasma is used. SOLUTION: In an aluminum alloy material forming an anodic oxidized film and a ceramic film on the surface in the described order, the anodic oxidized film contains >=0.1% one kind or two kinds or more selected from among C, N, P, F, B, S, further, the ceramic film is made of one or more kinds selected from among an oxide, nitride, carbonitride, boride, silicide.</p> |
