| 摘要 |
PURPOSE: A high frequency memory module is provided to decrease or remove a reflection in a net of a signal line between a signal driver or a receiver and a memory chip. CONSTITUTION: A memory module(10) has a module substrate(14) and a plurality of memory chips(15) installed on the module substrate(14). A terminal chip(16) is installed on the module substrate(14). The memory module(10) has a normal impedance signal line(20) formed on the module substrate(14), low level impedance signal lines(21,22) formed on the module substrate(14), and a low level impedance signal line(25) formed on a system substrate(12). The signal line(20) is designated as a memory chip signal line, and the signal line(21) is designated as a driver side signal line. The signal line(22) is designated as a terminal side signal and the signal line(25) is designated as a system signal line.
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