发明名称 METHOD FOR FORMING BARRIER METAL LAYER OF METAL CONTACT
摘要 PURPOSE: A method for forming a barrier metal layer of a metal contact is provided to form and improve an in-situ barrier metal layer for a short time, without additional equipment. CONSTITUTION: A method for forming a barrier metal layer comprising the steps of: depositing a TiN layer on a contact hole for a metal contact; and thermally treating the resultant and filling in gaps of the TiN layer by depositing a Ti layer on the TiN layer. The thermal treating and filling step are performed in a deposition chamber which is same with a chamber used at the TiN layer depositing step, or the thermal treating and filling step are performed in a chamber which is different from the chamber used at the TiN layer depositing step without vacuum break, with in-situ process.
申请公布号 KR20000021287(A) 申请公布日期 2000.04.25
申请号 KR19980040303 申请日期 1998.09.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYUN SEUNG
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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