发明名称 |
METHOD FOR FORMING BARRIER METAL LAYER OF METAL CONTACT |
摘要 |
PURPOSE: A method for forming a barrier metal layer of a metal contact is provided to form and improve an in-situ barrier metal layer for a short time, without additional equipment. CONSTITUTION: A method for forming a barrier metal layer comprising the steps of: depositing a TiN layer on a contact hole for a metal contact; and thermally treating the resultant and filling in gaps of the TiN layer by depositing a Ti layer on the TiN layer. The thermal treating and filling step are performed in a deposition chamber which is same with a chamber used at the TiN layer depositing step, or the thermal treating and filling step are performed in a chamber which is different from the chamber used at the TiN layer depositing step without vacuum break, with in-situ process.
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申请公布号 |
KR20000021287(A) |
申请公布日期 |
2000.04.25 |
申请号 |
KR19980040303 |
申请日期 |
1998.09.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYUN SEUNG |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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