| 摘要 |
PURPOSE: A semiconductor memory and manufacturing method thereof are provided to maintain a threshold value of a transistor as a certain value and maintain a leakage current of a thin film capacitor as a low level. CONSTITUTION: A source portion and drain portion(102) of a transistor consists of a silicon where arsenic is injected. A gate portion(103) of the transistor consists of a poly silicon for injecting the arsenic. A gate insulating film(104) of the transistor consists of a SiO2. A capacitance contact portion(105) consists of a poly silicon where the arsenic is injected. A layer insulating film(106) consists of SiO2. A lower electrode film(107) consists of a Ru/TiN/TiSix. A capacitance insulating film(108) has a high dielectric constant with a (Ba,Sr)TiO3. An upper electrode film(109) consists of Ru.
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