| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deviation of a substrate from the prescribed position of a dielectric block in the case the substrate is held to the dielectric block with respect to a method and device for relaxing the stress of a thin film. SOLUTION: At the time of executing sputtering, while a substrate 9 is held to the surface of a dielectric block 42 in a substrate holder 4 having an electrode 41 and the dielectric block 42 provided so as to be contacted with the electrode 41, the electrode 41 is applied with high frequency voltage, and a self-bias voltage by the interaction between plasma generated by sputtering discharge and the high frequency voltage is applied to the substrate 9, by which ions in the plasma are made incident thereon, and the stress of the produced thin film is relaxed. After the completion of the sputtering, a control part 7 controls a switching apparatus 6 to make the potential of the electrode 41 to be the grounded one, and electric charges remaining on the surface of the dielectric block 42 are diminished.
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