| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element with stable operation in self-oscillation by controlling a band gap of a saturable absorption layer and a carrier life and provide an optical disk device. SOLUTION: In a semiconductor laser element, a first conductive type clad layer 103, an active layer 50, and a second conductive type clad layer 105 are laminated sequentially on a semiconductor substrate 40. A saturable absorption layer 51 is formed on the second conductive type clad layer 105. The saturable absorption layer 51 has a band gap almost equal to or a little smaller than that of the active layer 50, and is heavily doped with nitrogen. |
