| 摘要 |
PROBLEM TO BE SOLVED: To realize a developing process wide in latitude of exposure and wide in latitude of focus and a having a rectangular cross section by adsorbing a strong alkali substrate to the resist film surface to be exposed and using a developer having a weak developing effect compared to the strong alkali substance to develop the hole resist film. SOLUTION: After a SiO2 film 2 is formed on a silicon wafer 1, an org. coating type antireflection film 3 is applied by spin coating and baked. Then, a chemically amplifying positive resist 4 is applied by spin coating, baked, then, irradiated with light 5 having a desired pattern for exposure and further, baked. Then, the resist 4 is exposed to the vapor 6 of an aq. solon. of 25% TMAH(tetramethylammonium hydroxide) to carry out strong development processing only to the resist film surface and to make the TMAH adsorb to the resist film surface. Thereafter, an aq. solon. of 0.15 N TMAH is dropped on the surface to develop it and to form a pattern. |
