| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive photosensitive resin compsn. which is excellent especially in a film remaining rate, a resist pattern profile, resolving power and dry etching resistance for deep UV rays, especially ArF excimer laser light, and which does not produce development defects. SOLUTION: This compsn. contains a polymer having a cyclic aliphatic hydrocarbon skeleton which is decomposed by the action of an acid and changed into alkali-soluble, low mol.wt. compds. expressed by the formula, compds. which produce acid by irradiation of active rays, nitrogen-contg. basic compds. a fluorine-based and/or silicon-based surfactant, and solvent. In the formula, R1, R2 are independently alkyl groups or R1 and R2 may be bonded to form a cyclic structure with carbon atoms, R3, R4 are independently hydrogen atoms or hydroxyl groups, and n is the number of repeating units and is an integer 1 to 5. |
