| 摘要 |
PROBLEM TO BE SOLVED: To provide a treating method of a patterned resist film by which changes in the pattern form are suppressed even at high temp. SOLUTION: A water-soluble crosslinking agent is applied on and kept in contact with a pattern resist film 11A consisting of a chemically amplifying resist containing a dissolution inhibitor for a specified time so as to allow the water-soluble crosslinking agent to permeate through the upper layer and side layer of the resist pattern film 11A. Then the water-soluble crosslinking agent remaining is removed by washing with water. Then the substrate is treated with the heat under first specified conditions to cause thermal crosslinking reaction by the permeated water-solble crosslinking agent and the resin which constitutes the resist pattern film so as to harden the upper layer and side layer of the resist pattern film 11A to form a thermally crosslinked layer 16 having high etching resistance. Further, the substrate is treated with the heat under second specified conditions with higher temp. than of the first conditions to pyrolyze the dissolution inhibitor included in the upper layer and side layer of the resist pattern film and to form a layer 17 having high etching durability and heat resistance. |
