| 摘要 |
PROBLEM TO BE SOLVED: To prolong the life of electromigration by constituting an upper layer wiring in a semiconductor device of a first metallic layer consisting of aluminum alloy formed on a lower layer wiring and a second metallic layer of aluminum alloy formed at a temperature higher than a formation temperature of the first metallic layer. SOLUTION: A lamination film of aluminum-basis aluminum alloy and high melting point metal and a lower layer wiring 2 consisting of a single layer film of high melting point metal alone or a lamination film thereof are formed on a semiconductor board 1, and an upper layer wiring 4 is electrically connected to the lower layer wiring 2 through a via hole 3. The upper layer wiring 4 has a structure wherein a high melting point metallic film 5, the first aluminum alloy film 6, a high melting point metallic film 7 and a second aluminum alloy film 8 are laminated one by one. The first aluminum alloy film.6 is formed at 300 deg.C or lower and the second aluminum alloy film 8 is formed at a temperature higher than 300 deg.C which provides fluidity to aluminum. |
