发明名称 |
SURFACE ACOUSTIC WAVE CONVOLVER |
摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave convolver which effectively transmits the electric field of surface acoustic waves through a semiconductor and efficiently interacts with electron in the semiconductor. SOLUTION: This surface acoustic wave convolver is provided with input electrodes 5, an output fetching electrode 7 and a semiconductor layer on a piezoelectric substrate 1. This semiconductor layer is located outside on the propagation path of surface acoustic waves propagated from the input electrodes 5 and has plural grating electrodes 6 arranged rectangularly to the propagation path on the propagation path. The output fetching electrode 7 is arranged so as to intersects to the plural grating electrodes 6 on the semiconductor layer, and the semiconductor layer consists of the laminated layers of an n type semiconductor layer 3 and a p type semiconductor layer 4.
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申请公布号 |
JP2000114924(A) |
申请公布日期 |
2000.04.21 |
申请号 |
JP19980278815 |
申请日期 |
1998.09.30 |
申请人 |
ASAHI CHEM IND CO LTD;YAMANOUCHI KAZUHIKO |
发明人 |
GOTOU HIROMASA;KUZE NAOHIRO;YAMANOUCHI KAZUHIKO |
分类号 |
H01L41/09;H03H9/25;H03H9/72;(IPC1-7):H03H9/72 |
主分类号 |
H01L41/09 |
代理机构 |
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地址 |
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