SUBSTRATE VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate voltage generating circuit and a semiconductor integrated circuit device for ensuring reliability by using a transistor whose gate oxidized film thickness is thin regardless of a high voltage boosting level. SOLUTION: A semiconductor integrated circuit device includes an oscillator for generating a clock signal and a charge pump circuit 100. The charge pump circuit 100 includes capacitative elements C1-C5 and an output transistor Q6. The capacitative element C2 boosts the voltage of a voltage boosting nose (node N2). A transistor Q9 cramps the voltage level of the node N2 to a constant value. The capacitative element C4 controls the gate voltage of the output transistor Q6. Voltages on transistors Q4 and Q7 and a capacitor C4 are reduced by using a transistor Q9, and the generation of hot carrier is suppressed.