| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which prevents electrostatic breakdown, with no significant change in a manufacturing process. SOLUTION: A substrate comprising a slice line 150 and wirings 100 and 120 provided in two, upper and lower, layers on the substrate are provided, and a process where the substrate is sliced to a specified size according to the slice line 150 is provided. Here, in an area which is outside of the slice line 150 and not going to be a semiconductor device, a common wiring 190 which electrically connects the wirings 100 and 120 is provided, and by removing the common wiring 190 in a slice process, the electrical connection of the wirings 100 and 120 is eliminated.
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