| 摘要 |
<p>PROBLEM TO BE SOLVED: To shorten a process of a semiconductor device for manufacturing a logic circuit and a non-volatile memory on a single substrate by contriving a write voltage and an erase voltage applied to the non-volatile memory to reduce the required breakdown voltage of the non-volatile memory to the same level as that of the logic circuit. SOLUTION: A deep first well 42 of a second conductive type is selectively formed on a semiconductor substrate 41 of a first conductive type. A third conductive well 43-2 of a first conductive type if formed in a place other than the place of the semiconductor substrate 41 where the first well 42 is formed. Here, a second well 43-1 and the third well 43-2 are formed at the same time by reducing the required breakdown voltage of a memory cell with some contrivance to the operating voltage of a non-volatile memory. Since the well 43-2 for logic circuit and a well 43-3 for the non-volatile memory are formed at the same time, a manufacturing process of a semiconductor device having the logic circuit and the non-volatile memory on the single substrate can be shortened.</p> |
