发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which has a langasite crystal structure expected as what has quality that is more excellent than conventional piezoelectric material and has an excellent characteristics with lanthanum - gallium - niobium system oxide single crystal as a substrate. SOLUTION: This surface acoustic wave device S is provided by using lanthanum - gallium - niobium system oxide single crystal having a langasite type crystal structure as a substrate 11 to obtain exciting electrodes 12 and 13 having film thickness where normalization film thickness h/λ(on condition that h: the film thickness of exciting electrode, andλ: the wavelength of a surface acoustic wave) satisfies 0.003 to 0.075 on this substrate. Also, when the exciting electrode is made of aluminum as the main component (>=50% weight), h/λis 0.025 to 0.075.
申请公布号 JP2000114919(A) 申请公布日期 2000.04.21
申请号 JP19980278434 申请日期 1998.09.30
申请人 KYOCERA CORP 发明人 SHIMIZU TAKAYUKI
分类号 H03H9/145;H03H9/25;(IPC1-7):H03H9/25 主分类号 H03H9/145
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