| 摘要 |
PROBLEM TO BE SOLVED: To raise the signal intensity even with a small number of thin films of a thin film layer structure showing a high magnetoresistance effect, by providing an interface reflecting depending on at least the spin between adjacent layers; the material thereof having lattice dimensions mutually matched with a specified deviation and a nonmixing property. SOLUTION: An interface reflecting, depending on at least the spin is provided between adjacent layers and the material thereof has lattice dimensions mutually matched with a deviation of 3% max. and made so as to mutually mix under manufacturing conditions of these layers. At least one of magnetic layers M1, M2 has a laminar region facing an intermediate layer Z having spin-selective reflection characteristics and a laminar region having scattering characteristics outside that region. The intermediate layer Z is made of Au, Cu and Ag having possibly low electricρvalues. The magnetic layers M1, M2 are obtd. by alloying different atoms with ferromagnetic elements Fe, Co and Ni having possibly highρvalues.
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