| 摘要 |
PROBLEM TO BE SOLVED: To obtain an abrasive composition with which the face accuracy and the polishing speed of an LSI device are made compatible and with which the stabilization of the polishing speed of the LSI device is realized at a level higher than that in a present state, by a method wherein in the secondary particle size distribution of cerium oxide, its maximum value is set at a specific value and its mean value is set in the range of a specific value. SOLUTION: In a secondary particle size distribution of cerium oxide, its maximum value is set preferably at 5μm or lower, more preferably at 3μm or lower and much most preferably at 1μm or lower. When the maximum value exceeds 5μm, it is not preferable because a very small flaw tends to be formed on the polished surface of an LSI device. In addition, in the secondary particle size distribution of the cerium oxide, its mean value is set preferably at 0.01 to 1.0μm, more preferably at 0.1 to 0.5μm. When it is less than 0.01μm, the polishing speed of an insulating film in addition to a silicon dioxide film, a silicon nitride film and an organic film becomes small. However, when it exceeds 1.0μm, it is not preferable because a very small flaw tends to be formed on the polished surface of the LSI device.
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