| 摘要 |
PROBLEM TO BE SOLVED: To simplify the insulation of a gate driving circuit and also reduce wiring reactances, and then, to match wiring impedances when flat semiconductor switching elements are connected in series and parallel with each other. SOLUTION: In a structure for connecting gates of semiconductor switching elements, a gate connecting conductor 21 which connects the gate poles of flat GTO(gate turn off) thyristors to each other is laid on a cooled conductive plate 2 through an insulating plate 20 and a gate driving circuit 5 is connected to the conductor 21 and conductive plate 2. Alternatively, resistors 31 and 32 are connected between the conductor 21 and the gate poles of the thrystors, respectively. More alternatively, a gate driving circuit 41 is mounted on the conductive plate 2 directly or through an insulator and one terminal of the circuit 41 is directly connected to the gate electrodes, with the other terminal of the circuit 41 being connected to the conductive plate 2. Further alternatively, supporting conductive plates 51 are connected between the conductive plate 2 and the thyristors, and the gate driving circuit 41 is mounted on the conductive plate 51 directly or through an insulator.
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