| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element wherein, in the formation of an embedded gate structure using an epitaxial growth technology, a channel compensation process with high impurity concentration does not increase the impurity concentration at a channel part. SOLUTION: In a semiconductor element comprising an embedded gate structure provided with a source/drain region of one conductivity type semiconductor layer and an opposite-conductivity type P+ gate layer 3 between them, a gate embedded epitaxial growth is performed using an N-type substrate comprising an N+ drain/ohmic layer 1 where phosphors diffusion is performed in a drain region, so that the concentration at an embedded part around the gate region is controlled.
|
