发明名称 LONGITUDINAL HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To perform high-temperature heat treatment of a wafer while rotating a substrate holder, and to surely seal the clearance between the inside of a reaction tube and the external. SOLUTION: A rotational shaft 53 is provided as passing it through a cover 5, and a clearance is so provided between the rotational shaft 53 and a shaft hole 55 such that the clearance is connected and communicates with labyrinthes 57, 58 communicating with the inside atmosphere of a reaction tube 2. Then, by making N2 gas, etc., flow in the clearance via a gas feeding path 56, the clearance between the rotational shaft 53 and the shaft hole 55 is sealed with an N2 curtain, and a wafer W is subjected to a high-temperature heat treatment by rotating it, while preventing the leakage of the atmosphere present in the reaction tube 2 of a furnace. As a result, a high in-plane uniformity is obtained, and, since a bearing can be used, there is no possibility of generating the deflection of the rotational shaft 53. Therefore, after the heat treatment of the wafer W, leaving intact a wafer boat 4 drawn out from the reaction tube 2, the transfer of the wafer W can be performed at that place.
申请公布号 JP2000114193(A) 申请公布日期 2000.04.21
申请号 JP19980293047 申请日期 1998.09.30
申请人 TOKYO ELECTRON LTD 发明人 ISHII KATSUTOSHI
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
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