SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To judge whether the potential of a word line is sufficiently raised or not or sufficiently lowered or not precisely even if a discharge transistor is connected to the word line. SOLUTION: A semiconductor memory device has a row decoder circuit which drives a word line, a quasi row decoder circuit 11 equivalent to the low decoder circuit, a quasi word line 12 driven by the quasi row decoder circuit and a word line voltage detection circuit 13 which detects that the voltages of a plurality of nodes on the word line are higher than a certain voltage when the word line is in a selective state and detects that the voltages of the plurality of nodes are less than the certain voltage when the word line is in a nonselective state by monitoring and latching the voltage states of the plurality of nodes and judges a period during which the word line is put into the selective state and the voltages of the plurality of nodes are elevated to values higher than the certain voltage and then the word line is put into the nonselective state and the voltages of the plurality of nodes are reduced to values less than the certain voltage.