| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of irregularities in the electrical resistance values of a source/drain region and a gate electrode, by introducing elements, molecules and compounds in a substrate through plasma doping which is capable of controlling does quantity. SOLUTION: A semiconductor substrate is held on a substrate holding table 6 in a chamber 5, and source gas 7 is introduced. The source gas 7 is mixed at an arbitrary ratio with a mixing means and introduced in the chamber 5 by an arbitrary flow rate with a flow rate control means such as a valve. After that, B2H6 in the source gas 7 is made into a plasma with an ECR plasma source 8. The state of plasma in the chamber 5 is observed with a plasma- observation apparatus 10, and the luminous intensity is measured. Dose quantity is understood from the luminous intensity. The value of dose quantity understood from the plasma observation is compared with the value of desired dose quantity, and the state of plasma is properly controlled on the basis of this difference. As a result, desired dose quantity can be obtained.
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