| 摘要 |
PROBLEM TO BE SOLVED: To provide air isolation for a metallic element in a circuit without impairing the integrity of an integrated circuit nor contaminating a machine used, when the integrated circuit is manufactured. SOLUTION: In order to provide an inter-metal and/or in-metal air isolation for at least some conductive metal elements 11 at metalization level of an integrated circuit, a polycrystalline germanium 12 is deposited in a mutually connecting between the conductive metal elements 11 on a substrate 10. The germanium 12 is polished chemically/mechanically. An insulating material layer 13 is deposited on the metal element 11 and the polycrystalline germanium 12, and a photoresist resin mask 14 is formed on the insulating material layer 13. The insulating material layer 13 is etched anisotropically, to form an opening part facing the polycrystal germanium 12 in the layer. The polycrystalline germanium 12 is removed in water solution or by a plasma, forming a mutually connecting gap filed with air. A capsule layer is further deposited to seal the mutual connecting gap. |
