| 摘要 |
PROBLEM TO BE SOLVED: To prevent the contamination of a semiconductor wafer by setting thickness of a process brittle layer to a specific value or less, the layer being on at least a surface exposed to a plasma of high-purity silicon carbide sintering part used in a semiconductor producing apparatus using plasma, thereby reducing the amount of particles. SOLUTION: In a plasma etching apparatus 1 as semiconductor producing apparatus, the thickness of a process brittle layer 12 on a grinding surface layer of a dummy ring 8 formed of a high-purity silicon carbide sinter located in the periphery of the upper surface of a lower electrode plate 5 is set to 1μm or less, preferably 0.5μm or less. In this way, by drastically reducing the thickness of the process brittle layer 12 to about 1μm, an amount of particles caused by lifting off the process brittle layer is surely reduced, even if the dummy ring is exposed to plasma. Thus, this can prevent a semiconductor wafer supported by the dummy ring 8 from being contaminated.
|
