| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve productivity by applying a solution containing a catalyst element onto the surface of an amorphous silicon film and introducing the catalyst element thereto. SOLUTION: An amorphous silicon film 12 is formed. It is treated by hydrofluroric acid to form an oxide film 13. An acetate solution added with a nickel is prepared, and it is dripped on the surface of the oxide film 13 on the amorphous silicon film 12 and the entire body is subject to spin drying using a spinner. Further, it is heated in a nitrogen atmosphere in a heating furnace, forming a silicon thin film 12 with crystallinity on a substrate 11. Thus, a semiconductor device with high productivity and excellent characteristic can be obtained.</p> |
