发明名称 STACKED CAPACITOR MEMORY CELL AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To eliminate difficulty in forming a capacitor with a small size and a high density, by forming a metallic layer serving as an internal electrode of the capacitor on a side wall of a dielectric layer, and forming a metallic layer serving as an external electrode of the capacitor on a layer made of a dielectric material. SOLUTION: A conductive plug 26 is electrically connected to a first area so as to cover the first area in a capacitor. Then, a dispersion blocking layer 27 is formed on the plug 26. Afterwards, a dielectric layer 28a disposed on the plug 26 is stacked on the barrier layer 27. Then, a first metallic layer 29, which is electrically connected to the barrier layer 27 and serves as an internal electrode of the capacitor, is formed on a side wall of the dielectric layer 28a. Further, a dielectric material layer 30, which serves as a dielectric of the capacitor, is formed on an upper part and a side wall of the dielectric layer 28a, and a second metallic layer 31 serving as an external electrode of the capacitor is formed on the dielectric material layer 30.
申请公布号 JP2000114475(A) 申请公布日期 2000.04.21
申请号 JP19990275314 申请日期 1999.09.28
申请人 SIEMENS AG 发明人 SHEN HUA;KUNKEL GERHARD;GUTSCHE MARTIN
分类号 H01L27/108;H01L21/02;H01L21/8242 主分类号 H01L27/108
代理机构 代理人
主权项
地址