| 摘要 |
PROBLEM TO BE SOLVED: To obtain the capacitor of a stacked DRAM which is excellent in electrical characteristics, reliability, etc. SOLUTION: A semiconductor device with a capacitor for holding charge comprises a lower electrode 76 which is connected via a plug with either of the source and the drain of a MIS transistor, a capacitor insulation film 77 which is formed on the lower electrode, and an upper electrode 78 which is formed on the capacitor insulation film. In this case, the lower electrode 76 comprises a first component which is buried in the hole with the plug 73 buried and is formed in self-alignment with the plug, and a second component which is formed on the first component and the area outside the first component and has the cross section larger than that of the first component, and the first component are integrally formed with the second component using a continuous film. |
