| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated device wherein the tight-contact strength of a projection electrode is enhanced. SOLUTION: A first-layer wiring metal film 3 and an interlayer oxide film 4 are formed on a field oxide film 2, an organic material such as SOG, etc., is applied and then is etched back to flatten the surface of first inter-layer oxide film 4, and a second interlayer oxide film 5 is formed on the first-layer wiring metal film 3 and the first interlayer oxide film 4. A second-layer wiring metal film 6 is formed on the second interlayer oxide film 5, and a surface protective film 7 is formed on the second-layer wiring metal film 6 and the second interlayer oxide film 5. Until the first-layer wiring metal film 3 is exposed, the surface protective film 7 and the second interlayer oxide film 5 are selectively etched into a tapered shape 10, removed, and then a barrier metal 8 is formed at this point, on which a projection electrode 9 is formed. |
