| 摘要 |
PROBLEM TO BE SOLVED: To improve surge voltage limitation characteristics and to increase the amount of resistance of absorption energy by utilizing the inverse yield characteristics of an SiC rectification diode as a surge absorber. SOLUTION: An SiC rectification diode is connected in series in inverse polarity as a surge absorber 1. The SiC rectification diode conducts electricity at a low forward voltage in a forward direction but conducts almost no electricity in an opposite direction. However, when a voltage in an inverse direction is increased, an inverse yield occurs at a certain voltage and an inverse current rapidly increases. In the SiC rectification diode where SiC is used for a semiconductor, the band gap energy of the SiC is approximately three times larger than that of silicon, and the upper limit of the operation temperature of the junction is approximately 1,000 deg.C as compared with approximately 150 deg.C of silicon. As a result, when an ordinary temperature is for example 40 deg.C, energy can be absorbed by approximately ten times larger using the same substrate dimension in terms of heat insulation using the SiC rectification diode. |
