| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory circuit in which data can be transferred to a part of a selected column and, further, by driving sensing amplifiers with small capabilities at the time of data transfer, the data can be written easily when they are transferred and data in adjacent bit lines are securely kept to avoid the breakdown of data. SOLUTION: In a semiconductor storage device which has a DRAM and an SRAM between which data can be transferred, control circuits 151-154 which control the capabilities of the power supplies of the sensing amplifiers of the DRAM are provided. When data of the SRAM are transferred to the DRAM, the power supply capabilities are reduced by the control circuits and, after the writing is finished, the power supply capabilities are increased.
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