| 摘要 |
PROBLEM TO BE SOLVED: To obtain a metal film which makes it possible to reduce film the formation temperature and further attain practical film formation speed, by adding carbonic gas to material gas containing metal halide gas and reducing gas. SOLUTION: A lower-layer interlayer insulating film 1 is formed on a semiconductor substrate, and lower-layer wiring 2 of Al alloy or the like is formed on the lower-layer interlayer insulating film 1. The lower-layer wiring 2 is subjected to spin coating, and subsequently to curing in an N2 atmosphere to form an organic polymeric material film 3 of polyarylether. An oxide film 4 is deposited thereon to form an interlayer insulating film 5. Connecting holes 6 facing on the lower-layer wiring is formed in the interlayer insulating film 5, and a barrier metal 7 film is formed on this structure. Thereafter, carbonic gas, such as CO and CH4, is added to reducing gas, such as metal halide and hydrogen, using a low-pressure CVD system to form a metal film 8.
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