ACTIVE MATRIX SUBSTRATE AND ITS MANUFACTURE, AND LIQUID CRYSTAL DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent short circuit between TFTs(thin film transistors) formed on a substrate without increasing the number of steps. SOLUTION: In respective impurity doping steps for forming plural TFTs 10C on an active matrix substrate, peripheries of regions for forming TFTs 10C and specified regions between adjacent TFTs 10C are covered with resist masks RM11-RM14. Consequently, if an excessive semiconductor thin film 20D (20E, 20F) remains in the case an island shaped semiconductor thin film 20C is formed, an interspace between two source-drain regions 12C in TFT 10C is insulated and separated with an intrinsic semiconductor thin film 20F. In a remaining semiconductor thin film 20E, which combines two TFTs 10C formed on adjacent two pixels, the interspace becomes an intrinsic region 20J separating elements without any doped impurities.