| 摘要 |
<p>PROBLEM TO BE SOLVED: To make a drain current large so as to improve the performance of applicable device by forming on a substrate in sequence, a thin film with a step in channel widthwise direction, an active layer silicon film, a gate insulation film covering the thin film, a gate insulation film thereon, and a gate electrode thereon. SOLUTION: First, a silicon oxide film is formed on a glass substrate 1, and the silicon oxide film 21 for forming step is formed parallel to the channel lengthwise direction by patterning. An excimer laser 3 is emitted thereto to melt and recrystalize silicon, forming a polycrysalline silicon film 2 of active layer. Then impurity ions 7 are introduced by using a resist 13 and a gate electrode 5 as a mask. After removing the resist 13 an interlayer insulation film 10 is formed and a contact hole 11 is made, and a gate wiring electrode 6 and a source/drain wiring electrode 12 are formed. Thus, the uniform characteristic of a thin-film transistor can be kept without increasing its device area and the drain current be increased.</p> |
