| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, wherein a sticking process of foreign objects and dust, etc., to a semiconductor wafer is specified for improved manufacture yield, etc. SOLUTION: A specified film is formed on a semiconductor wafer 1 in a film-forming process, a mask of specified pattern is formed on a specified film in a photolithographic process, and the specified film is etched using the mask to form a large number of semiconductor chips on the semiconductor wafer 1. Here, a semiconductor chip formation region 2, where a semiconductor chip is formed is provided at the semiconductor wafer 1 and a monitor chip formation region 3, is provided at a central part, intermediate part, and peripheral part of the semiconductor wafer 1, so that a monitor chip is formed in the region so as to leave a formed specified film with no etching the monitor chip when forming semiconductor chips.
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