| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a Cu buried wiring of low contact resistance and which is applied to a logic system LSI requiring high speed operation by forming a Cu diffusion preventing barrier metal of low resistance before a wiring connecting hole and a wiring groove are filled with Cu. SOLUTION: This semiconductor device is provided with a barrier metal which comprises an inter-layer insulating film 2, formed on a semiconductor substrate 1 in which a wiring connecting hole and a wiring groove are formed, a metal silicide 5 formed at the bottom of the wiring connecting hole, an alumina alloy film 7 formed on the side surface of the wiring connecting hole and the inner surface of the wiring groove, and an aluminum silicide alloy film 8 formed at the bottom of the wiring connecting hole and on the metal silicide, and has a Cu diffusion preventing function, and a buried wiring 9a containing Cu as a main component, which is buried in the wiring connecting hole and the wiring groove on the barrier metal.
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