| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with which uniformity with respect to collector current of the current amplification factor of a horizontal bipolar transistor mounted on the same substrate with a vertical bipolar transistor is achieved. SOLUTION: A semiconductor device has vertical and horizontal bipolar transistors 6 and 7 respectively which are formed in a semiconductor area on an insulating film 2. The vertical transistor has a collector, a base and an emitter region 21, 26 and 27 which are formed on the insulating film as a vertical transistor activating region. The horizontal transistor has a base region 4 formed on the insulating film and an emitter and collector regions 18 formed at both ends of the base region 4 on the insulating film as a horizontal transistor activating region. The horizontal type transistor active region is thinner than the vertical transistor activating region. The emitter and the collector of the horizontal type transistor are formed by horizontal diffusion of impurities toward both ends of the base region.
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