| 摘要 |
PROBLEM TO BE SOLVED: To enable further high-speed read-out. SOLUTION: This flash memory comprises a memory cell array 17, a row address buffer 18, a row decoder 19, row driver 20, a column address buffer 21, a column decoder 22, a column selector 23, a sense amplifier circuit 24, a write circuit 25 and a control circuit 26. Memory cells MC11,..., MCnk are selected when data is read not by a control gate of a memory transistor, but by controlling a switching transistor with normal voltage.
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