| 摘要 |
<p>PROBLEM TO BE SOLVED: To produce a thin film transistor for a liq. crystal display device using 4 mask plates by simultaneously patterning gate insulation film, a semiconductor layer, a contact layer and a data conducting layer. SOLUTION: A gate wiring including gate lines 22, gate electrodes 26 and gate pads 24 are formed in a lateral direction on a substrate 10 by using a first mask. Four-layered layer of gate insulation film 80, a semiconductor layer 40, a contact layer 50 and a data conducting layer 60 are continuously laminated and patterning is carried out with a second mask by dry etching method. ITO film is laminated, transparent conductor patterns 71-77 are formed with a third mask by dry etching method, and the data conducting layer 60 and the contact layer 50 which are not covered with the transparent conductor patterns are dry-etched. And protecting film 80 is laminated, aperture parts 81-85 are formed by patterning with a fourth mask and a semiconductor layer 40 exposed under the aperture parts 81, 82 is etched to be divided into two parts 42, 47.</p> |
