| 摘要 |
PROBLEM TO BE SOLVED: To realize a multilayer multichip semiconductor device whose thickness is reduced by reducing the height of wire loops by connecting between electrode pads of a semiconductor chip which is stacked on the upside and inner electrodes through lower electrode pads. SOLUTION: A first semiconductor chip 10 is bonded and a second semiconductor chip 11 is bonded on the first semiconductor chip 10. Ball bumps 17 are formed on a first bonding pad 12a. A second bonding pad 12b and a ball bump 17 are connected through a second bonding wire 18 in such a way that stitch bonding is performed on the ball bump. Further, a ball bump 17 is connected to an inner electrode 14 through a first bonding wire 19. The second bonding pad 12b and the inner electrode 14 are electrically connected through the first bonding pad 12a. |
