| 摘要 |
PROBLEM TO BE SOLVED: To form an emitter without requiring alignment by forming a second insulation film substantially up to the upper surface of a one conductivity type semiconductor film and then forming an opposite conductivity type semiconductor film on the exposed part of the one conductivity type semiconductor film. SOLUTION: A step is formed between a silicon oxide and the active region 55 of a transistor, and a protrusion is formed on the upper surface of a P-type silicon substrate 51. Subsequently, a P-type silicon films 56, 57 are formed, respectively, as the base and collector followed by formation of a silicon oxide 61 on the entire surface. Furthermore, a polysilicon film 58 is formed on the entire surface, and then the protruded part of the silicon oxide 61 is exposed by removing the polysilicon film 58 from the upper surface thereof. Finally, N-type impurities are injected into the part of the P-type silicon film 57 on the upper surface of an active region 55 thus converting the P-type silicon film 57 into an N-type silicon film 60.
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