| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein a wiring short circuit and a self-matching contact in which increase of contact resistance is suppressed are formed, without causing etching stop. SOLUTION: This method consists of a process in which a gate electrode 3 provided with a sidewall is formed on a semiconductor substrate 1, a process where source/drain regions 6 and 7 of an LDD(lightly-doped drain) structure are formed, a process where an etching stopper layer 8 is formed on the whole surface, a process where an organic insulating film 14 filling up between gate electrodes is formed, a process where an inter-layer insulating film 9 is formed over the whole surface, a process where the inter-layer insulating film 9 and the organic insulating film 14 are etched, while a polymer layer is accumulated on the surface of the etching stopper layer 8 to provide an opening, a process where the polymer layer and the etching stopper layer 8 of the bottom of the opening are removed to form a contact hole 10, and a process where an upper wiring 11 is formed.
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