| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable long-life nitride semiconductor laser element, by preventing flaking of a p-type electrode and improving heat radiating characteristics even when a resonance face is formed by cleavage in a more practical way. SOLUTION: A nitride semiconductor laser element includes a ridge-shaped stripe with an insulating film 62 on a side of the stripe. An insulating protective film 201 is formed from a part of a p-type electrode 20 on the uppermost layer of the stripe to the side face of the ridge-shaped stripe. A p-type pad electrode 101 connected electrically with the p-type electrode 20 is formed by cleavage on the insulating protective film 201.
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