CMOS TRANSISTOR TYPE SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To reduce the variation of a TPD caused by the variation of the gate length of a MOS transistor constituting a CMOS transistor. SOLUTION: In a clocked CMOS transistor inverter, the capacitor electrodes 30a and 30b of a 1st capacitor part 30 connecting the source 12S (1st node 44) of a 2nd pMOS transistor 12 with a ground potential point 22 and the capacitor electrodes 32a and 32b of a 2nd capacitor part 32 connecting the source (3rd node 48) of a 1st nMOS transistor 14 with the ground potential point are made into rectangular patterns being parallel to each other. Also, they are formed together with a gate by polysilicon being the same material as the gate when the gate is formed.