MANUFACTURE OF ELECTROOPTICAL DEVICE AND MANUFACTURE OF DRIVING SUBSTRATE FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an active matrix substrate incorporating a high performance driver and an electrooptical device such as a thin film semiconductor device for a display using the substrate by uniformly film-forming a single crystal silicon thin film with high electron/hole mobility at a comparatively low temperature. SOLUTION: The method for manufacturing an electrooptical device comprises forming a single crystal silicon layer 7 from a low melting metal layer 6, in which polycrystalline silicon or the like is dissolved, by a graphoepitaxial growth method using a difference in level 4 formed on a substrate 1 as a seed and utilizing the single crystal silicon layer 7 for a bottom- gate MOSTFT(MOS thin film transistor) for the electrooptical device such as an integrated display periphery driving circuit type LCD(liquid crystal display).