| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture for polycrystalline silicon for use in a semiconductor memory device memory device, which in fact solves and reduces defects and problems relating to a conventional manufacturing technique. SOLUTION: In this method, under specified temperature conditions and specified pressure conditions such that a core of a rough polycrystalline silicon is formed and grown, the rough polycrystalline silicon in-situ-doped within a sheet-fed chemical vapor-deposition chamber is vapor-deposited on a base, thereby producing a rough polycrystalline silicon. In this case, in the vapor deposition step, SiH4 flows into a single-wafer processing reaction apparatus 40, and substantially upon the inflow of SiH4, PH3 flows into the sheet-fed reactor 10, and next substantially upon an inflow of SiH4 and PH3, substantially and at the same time causing H2 to flow into the single-wafer processing reaction apparatus 10.
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