| 摘要 |
PROBLEM TO BE SOLVED: To improve electromigration resistance of an Al alloy wiring. SOLUTION: A laminated film, consisting of a lower layer Ti film 9a wherein Ti (002) orientation, is relatively storing, a TiN film 9b where TiN (111) orientation is relatively strong and an upper layer Ti film 9c is interposed on a plug electrode 8 constituted of a W film 7 for forming an Al alloy wiring 11 where Al (111) orientation is relatively strong. Furthermore, the grain diameter of the Al alloy wiring 11 is made as small as about 0.2 to 1.0μm and the dispersion of the grain diameter is made relatively small. As a result, the electromigration resistance of the Al alloy wiring 11 is improved.
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